IR2011STRPBF

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 125 C
Package / Case : SOIC-8
Product : H-Bridge Drivers
Supply Voltage - Max : 20 V
Supply Voltage - Min : 10 V
Fall Time : 35 ns
Maximum Power Dissipation : 625 mW
Type : High and Low Side
Supply Current : 0.23 mA
Rise Time : 50 ns


Description

The IR2011STRPBF is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

The features of IR2011STRPBF can be summarized as (1)floating channel designed for bootstrap operation fully operational up to +200V tolerant to negative transient voltage, dV/dt immune; (2)gate drive supply range from 10V to 20V; (3)independent low and high side channels; (4)input logicHIN/LIN active high; (5)undervoltage lockout for both channels; (6)3.3V and 5V input logic compatible.

The absolute maximum ratings of IR2011STRPBF are (1)VB high side floating supply voltage: -0.3 to 250V; (2)VS high side floating supply offset voltage: VB - 25 to VB + 0.3V; (3)VHO high side floating output voltage: VS - 0.3 to VB + 0.3V; (4)VCC low side fixed supply voltage: -0.3 to 25V; (5)VLO low side output voltage: -0.3 to VCC +0.3V; (6)VIN logic input voltage (HIN & LIN): COM -0.3 to VCC +0.3V; (7)dVs/dt allowable offset supply voltage transient (figure 2): 50 V/ns; (8)PD package power dissipation @ TA +25°C (8-lead DIP): 1.0/(8-lead SOIC): 0.625W; (9)RTHJA thermal resistance, junction to ambient (8-lead DIP): 125/(8-lead SOIC): 200°C/W; (10)TJ junction temperature: 150°C; (11)TS storage temperature of the IR2011STRPBF: -55 to 150°C; (12)TL lead temperature (soldering, 10 seconds): 300°C.

Parameters:

Technical/Catalog Information	IR2011STRPBF
Vendor	International Rectifier (VA)
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	1A
Delay Time	80ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Cut Tape (CT)
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	200V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IR2011STRPBF IR2011STRPBF IR2011SPBFCT ND IR2011SPBFCTND IR2011SPBFCT