FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 83W
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 40µA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 2653pF @ 15V
Supplier Device Package: P-TO251-3
Parameters: | Technical/Catalog Information | IPU07N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 2653pF @ 15V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 22nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPU07N03LA
IPU07N03LA
IPU07N03LAIN ND
IPU07N03LAINND
IPU07N03LAIN
|
IPU07N03LA Data Sheet
