IPU04N03LA

MOSFET N-CH 25V 50A IPAK

product image

IPU04N03LA Picture
SeekIC No. : 003431361 Detail

IPU04N03LA: MOSFET N-CH 25V 50A IPAK

floor Price/Ceiling Price

Part Number:
IPU04N03LA
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) @ Vgs: 41nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5199pF @ 15V
Power - Max: 115W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: P-TO251-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Power - Max: 115W
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Gate Charge (Qg) @ Vgs: 41nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: P-TO251-3
Input Capacitance (Ciss) @ Vds: 5199pF @ 15V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 50 A
TC=100 50
Pulsed drain current ID,pulse TC=25 3) 350
Avalanche energy, single pulse EAS ID=40 A, RGS=25 Ω 890 mJ
Reverse diode dv /dt dv /dt ID=50 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 115 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPU04N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 5199pF @ 15V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPU04N03LA
IPU04N03LA



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Potentiometers, Variable Resistors
Resistors
Cables, Wires - Management
Isolators
Test Equipment
View more