Position: Home  > All Categories> Integrated Circuits (ICs) > IPU04N03LBG

IPU04N03LBG

MOSFET N-KANAL POWER MOS

product image

IPU04N03LBG Picture
See larger image
SeekIC No. : 00163848 Detail

IPU04N03LBG: MOSFET N-KANAL POWER MOS

IPU04N03LBG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPU04N03LBG
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 6 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=252)
50
A
TC=100
50
Pulsed drain current
ID,pulse
TC=253)
200
Avalanche energy, single pulse
EAS
ID=9.3 A, RGS=25
430
mJ
MOSFET dv /dt ruggedness
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175
6
kV/s
Gate source voltage4)
VGS
static
±20
V
Power dissipation
Ptot
TC=25
115
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56  



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Tapes, Adhesives
803
AC452-2
Line Protection, Backups
BX0023
A20B-1008-0550
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more