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IPU04N03LAG

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00161712 Detail

IPU04N03LAG: MOSFET N-KANAL POWER MOS

IPU04N03LAG Data Sheet

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Part Number:
IPU04N03LAG
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 5.9 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 5.9 m Ohms


Features:

• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=252)
50
A
TC=100
50
Pulsed drain current
ID,pulse
TC=253)
350
Avalanche energy, single pulse
EAS
ID=9.3 A, RGS=25
600
mJ
MOSFET dv /dt ruggedness
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175
6
kV/s
Gate source voltage4)
VGS
static
±20
V
Power dissipation
Ptot
TC=25
115
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56  



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