IPP60R600CP, US $ .52-.55 , Infineon Technologies, IPP60R600CP DataSheet download, circuit diagram from SeekIC.com

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IPP60R600CP: MOSFET COOL MOS PWR TRANS 650V

IPP60R600CP Data Sheet

US $ .52~.55 / Piece | Get Latest Price

Part Number:: IPP60R600CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6.1 A
Resistance Drain-Source RDS (on) :	0.6 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 6.1 A
Resistance Drain-Source RDS (on) : 0.6 Ohms

Parameters:

Technical/Catalog Information	IPP60R600CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.1A
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 100V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP60R600CP IPP60R600CP

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IPP60R600CP

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