IPP60R099CP, US $ 2.81-4.55 , Infineon Technologies, IPP60R099CP DataSheet download, circuit diagram from SeekIC.com

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IPP60R099CP: MOSFET MOSFET N-Channel

IPP60R099CP Data Sheet

US $ 2.81~4.55 / Piece | Get Latest Price

Part Number:: IPP60R099CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$4.55
$3.73
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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	31 A
Resistance Drain-Source RDS (on) :	0.099 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.099 Ohms

Parameters:

Technical/Catalog Information	IPP60R099CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	99 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 100V
Power - Max	255W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP60R099CP IPP60R099CP IPP60R099CPIN ND IPP60R099CPINND IPP60R099CPIN

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IPP60R099CP

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