MOSFET MOSFET N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 31 A | ||
Resistance Drain-Source RDS (on) : | 0.099 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | IPP60R099CP |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 31A |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 2800pF @ 100V |
Power - Max | 255W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPP60R099CP IPP60R099CP IPP60R099CPIN ND IPP60R099CPINND IPP60R099CPIN |