MOSFET N-CH 650V 9.2A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 9.2 A |
Resistance Drain-Source RDS (on) : | 0.41 Ohms | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |