IPP60R165CP, US $ 1.46-2.37 , Infineon Technologies, IPP60R165CP DataSheet download, circuit diagram from SeekIC.com

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IPP60R165CP: MOSFET COOL MOS PWR TRANS 650V

IPP60R165CP Data Sheet

US $ 1.46~2.37 / Piece | Get Latest Price

Part Number:: IPP60R165CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	21 A
Resistance Drain-Source RDS (on) :	0.165 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.165 Ohms

Parameters:

Technical/Catalog Information	IPP60R165CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	165 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 100V
Power - Max	192W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP60R165CP IPP60R165CP

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IPP60R165CP

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