MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A
IPP120N04S3-02: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
Resistance Drain-Source RDS (on) : | 2.3 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | IPP120N04S3-02 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 14300pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Package / Case | TO-220-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPP120N04S3 02 IPP120N04S302 |