IPP120N04S3-02, US $ .82-1.75 , Infineon Technologies, IPP120N04S3-02 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00151368 Detail

IPP120N04S3-02: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A

IPP120N04S3-02 Data Sheet

US $ .82~1.75 / Piece | Get Latest Price

Part Number:: IPP120N04S3-02
Mfg:: Infineon Technologies
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$1.75
$1.58
$1.27
$.82

Processing time
15 Days
15 Days
15 Days
15 Days

View more price & deliveries

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IPP100N04S2-04 evaluate
US $.97 - 1.42 / Piece

MOSFET OptiMOS PWR TRANST 40V 100A
IPP100N04S2L-03 evaluate
US $.97 - 1.42 / Piece

MOSFET OptiMOS PWR TRANST 40V 100A
IPP100N04S3-03 evaluate
US $.62 - 1.32 / Piece

MOSFET OptiMOS T PWR-TRANS N-CH 40V 100A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	120 A
Resistance Drain-Source RDS (on) :	2.3 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 2.3 m Ohms

Parameters:

Technical/Catalog Information	IPP120N04S3-02
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	2.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	14300pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	210nC @ 10V
Package / Case	TO-220-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP120N04S3 02 IPP120N04S302

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IPP120N04S3-02

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Transformers(1503)

Tapes, Adhesives(300)

Test Equipment(3237)

Industrial Controls, Meters(3690)

Motors, Solenoids, Driver Boards/Modules(2035)

Isolators(194)