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IPP100N04S2L-03

MOSFET OptiMOS PWR TRANST 40V 100A

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SeekIC No. : 00157588 Detail

IPP100N04S2L-03: MOSFET OptiMOS PWR TRANST 40V 100A

IPP100N04S2L-03 Data Sheet

floor Price/Ceiling Price

US $ .97~1.42 / Piece | Get Latest Price
Part Number:
IPP100N04S2L-03
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~245
  • 245~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.42
  • $1.28
  • $1.15
  • $.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 3.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 3.3 m Ohms


Features:

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
100
A
T C=100 ,
VGS=10 V2)
100
Pulsed drain current2)
I D,pulse
T C=25
400
Avalanche energy, single pulse2)
EAS
I D=80A
810
mJ
Gate source voltage4)
VGS
±20
V
Power dissipation
Ptot
T C=25
300
W
Operating and storage temperature
T j, T stg
-55 ... +175



Parameters:

Technical/Catalog InformationIPP100N04S2L-03
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs230nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP100N04S2L 03
IPP100N04S2L03



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