Position: Home  > All Categories> Integrated Circuits (ICs) > IPP100N08S2-07

IPP100N08S2-07

MOSFET OptiMOS PWR TRANST 75V 100A

product image

IPP100N08S2-07 Picture
See larger image
SeekIC No. : 00153467 Detail

IPP100N08S2-07: MOSFET OptiMOS PWR TRANST 75V 100A

IPP100N08S2-07 Data Sheet

floor Price/Ceiling Price

US $ 1.12~1.95 / Piece | Get Latest Price
Part Number:
IPP100N08S2-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.95
  • $1.67
  • $1.25
  • $1.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.0071 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 0.0071 Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25, VGS=10V
100
A
TC=100,VGS=10V
94
Pulsed drain current
IDP
TC=25
400
Avalanche energy, single pulse
EAS
I D=12 A
810
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 ... +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPP100N08S2-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs7.1 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-220-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP100N08S2 07
IPP100N08S207



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Kits
IT243
UVSC-110-4E1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Prototyping Products
AVT4168
DE1
View more