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IPP100N06S3-03

MOSFET OptiMOS-T2 PWR TRANS 55V 100A

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SeekIC No. : 00163038 Detail

IPP100N06S3-03: MOSFET OptiMOS-T2 PWR TRANS 55V 100A

IPP100N06S3-03 Data Sheet

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Part Number:
IPP100N06S3-03
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 3.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 3.3 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM EIA/JESD22-A114-B


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current1) ID T C=25, VGS=10 V 100 A
T C=100 ,
VGS=10 V2)		 100
Pulsed drain current2) ID,pulse TC=25 400
Avalanche energy, single pulse3) EAS ID=50 A 690 mJ
Drain gate voltage2) VDG   55 V
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 300 W
Operating and storage temperature Tj, Tstg   -55 ... +175
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPP100N06S3-03
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 21620pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs480nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP100N06S3 03
IPP100N06S303



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