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IPI80N08S2-07

MOSFET OptiMOS PWR TRANST 75V 100A

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IPI80N08S2-07: MOSFET OptiMOS PWR TRANST 75V 100A

IPI80N08S2-07 Data Sheet

floor Price/Ceiling Price

US $ .73~1.28 / Piece | Get Latest Price
Part Number:
IPI80N08S2-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.28
  • $1.1
  • $.82
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.0071 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.0071 Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
ID
TC=25 °C, VGS=10 V
80
A
TC=100 °C,
VGS=10 V2)
80
Pulsed drain current2)
ID,pulse
TC=25 °C
320
Avalanche energy, single pulse2)
EAS
ID=80A
810
mJ
Gate source voltage4)
VGS
±20
V
Power dissipation
Ptot
TC=25 °C
300
W
Operating and storage temperature
Tj,Tstg
-55 ..+175
°C
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPI80N08S2-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs7.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI80N08S2 07
IPI80N08S207



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