MOSFET OptiMOS PWR TRANST 75V 100A
IPI80N08S2-07: MOSFET OptiMOS PWR TRANST 75V 100A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 0.0071 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current1) |
ID |
TC=25 °C, VGS=10 V |
80 |
A |
TC=100 °C, VGS=10 V2) |
80 | |||
Pulsed drain current2) |
ID,pulse |
TC=25 °C |
320 | |
Avalanche energy, single pulse2) |
EAS |
ID=80A |
810 |
mJ |
Gate source voltage4) |
VGS |
±20 |
V | |
Power dissipation |
Ptot |
TC=25 °C |
300 |
W |
Operating and storage temperature |
Tj,Tstg |
-55 ..+175 |
°C | |
IEC climatic category; DIN IEC 68-1 |
55/175/56 |
Technical/Catalog Information | IPI80N08S2-07 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 4700pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI80N08S2 07 IPI80N08S207 |