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IPI80N03S4L-03

MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A 2.4mOhms

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SeekIC No. : 00153473 Detail

IPI80N03S4L-03: MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A 2.4mOhms

IPI80N03S4L-03 Data Sheet

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Part Number:
IPI80N03S4L-03
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 2.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 2.7 m Ohms


Parameters:

Technical/Catalog InformationIPI80N03S4L-03
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max94W
PackagingTube
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI80N03S4L 03
IPI80N03S4L03



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