IPI80N06S3L-05

MOSFET MOSFET

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SeekIC No. : 00160782 Detail

IPI80N06S3L-05: MOSFET MOSFET

floor Price/Ceiling Price

Part Number:
IPI80N06S3L-05
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0048 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.0048 Ohms


Parameters:

Technical/Catalog InformationIPI80N06S3L-05
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 69A, 10V
Input Capacitance (Ciss) @ Vds 13060pF @ 25V
Power - Max165W
PackagingTube
Gate Charge (Qg) @ Vgs273nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI80N06S3L 05
IPI80N06S3L05
IPI80N06S3L 05IN ND
IPI80N06S3L05INND
IPI80N06S3L-05IN



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