MOSFET COOL MOS PWR TRANS MAX 650V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16 A | ||
Resistance Drain-Source RDS (on) : | 0.199 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Technical/Catalog Information | IPI60R199CP |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 16A |
Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
Input Capacitance (Ciss) @ Vds | 1520pF @ 100V |
Power - Max | 139W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 43nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI60R199CP IPI60R199CP |