IPI60R125CP, US $ 1.99-2.18 , Infineon Technologies, IPI60R125CP DataSheet download, circuit diagram from SeekIC.com

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IPI60R125CP: MOSFET COOL MOS N-CH 650V 0.125Ohms

IPI60R125CP Data Sheet

US $ 1.99~2.18 / Piece | Get Latest Price

Part Number:: IPI60R125CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/12

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	25 A
Resistance Drain-Source RDS (on) :	0.125 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 25 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.125 Ohms

Parameters:

Technical/Catalog Information	IPI60R125CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	125 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 100V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI60R125CP IPI60R125CP

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IPI60R125CP

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