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IPD30N03S4L-14

MOSFET OPTIMOS T2 N-CH 30V 30A 13.6mOhms

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SeekIC No. : 00146394 Detail

IPD30N03S4L-14: MOSFET OPTIMOS T2 N-CH 30V 30A 13.6mOhms

IPD30N03S4L-14 Data Sheet

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Part Number:
IPD30N03S4L-14
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 13.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 13.6 m Ohms


Parameters:

Technical/Catalog InformationIPD30N03S4L-14
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs13.6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 980pF @ 25V
Power - Max31W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD30N03S4L 14
IPD30N03S4L14



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