MOSFET N-Channel enh MOSFET 30V
IPD30N03S4L-09: MOSFET N-Channel enh MOSFET 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 30 A |
Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | IPD30N03S4L-09 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 1520pF @ 15V |
Power - Max | 42W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPD30N03S4L 09 IPD30N03S4L09 |