IPD30N03S4L-09

MOSFET N-Channel enh MOSFET 30V

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IPD30N03S4L-09: MOSFET N-Channel enh MOSFET 30V

floor Price/Ceiling Price

US $ .21~.42 / Piece | Get Latest Price
Part Number:
IPD30N03S4L-09
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.42
  • $.37
  • $.29
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Package / Case : TO-252
Packaging : Reel    

Description

Mounting Style :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 9 mOhms


Parameters:

Technical/Catalog InformationIPD30N03S4L-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1520pF @ 15V
Power - Max42W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD30N03S4L 09
IPD30N03S4L09



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