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IPB77N06S3-09

MOSFET OptiMOS-T2 PWR TRANS 55V 77A

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SeekIC No. : 00161954 Detail

IPB77N06S3-09: MOSFET OptiMOS-T2 PWR TRANS 55V 77A

IPB77N06S3-09 Data Sheet

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Part Number:
IPB77N06S3-09
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 77 A
Resistance Drain-Source RDS (on) : 8.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Continuous Drain Current : 77 A
Resistance Drain-Source RDS (on) : 8.8 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C, VGS=10 V 77 A
TC=100 °C,VGS=10 V 55  
Pulsed drain current ID,pulse TC=25 °C 308  
Avalanche energy, single pulse EAS ID=38 A 170 mJ
Drain gate voltage VDG   55
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 107 W
Operating and storage temperature Tj, Tstg   -55 ... +175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPB77N06S3-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C77A
Rds On (Max) @ Id, Vgs8.8 mOhm @ 39A, 10V
Input Capacitance (Ciss) @ Vds 5335pF @ 25V
Power - Max107W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB77N06S3 09
IPB77N06S309



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