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IPB70N10S3-12

MOSFET OptiMOS -T PWR TRANS 100V 70A

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SeekIC No. : 00153105 Detail

IPB70N10S3-12: MOSFET OptiMOS -T PWR TRANS 100V 70A

IPB70N10S3-12 Data Sheet

floor Price/Ceiling Price

US $ .69~1.12 / Piece | Get Latest Price
Part Number:
IPB70N10S3-12
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.12
  • $1
  • $.8
  • $.69
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.0113 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : TO-263
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.0113 Ohms


Parameters:

Technical/Catalog InformationIPB70N10S3-12
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs11.3 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds 4355pF @ 25V
Power - Max125W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB70N10S3 12
IPB70N10S312



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