MOSFET OptiMOS -T PWR TRANS 100V 70A
IPB70N10S3-12: MOSFET OptiMOS -T PWR TRANS 100V 70A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 70 A | ||
Resistance Drain-Source RDS (on) : | 0.0113 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Technical/Catalog Information | IPB70N10S3-12 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 70A |
Rds On (Max) @ Id, Vgs | 11.3 mOhm @ 70A, 10V |
Input Capacitance (Ciss) @ Vds | 4355pF @ 25V |
Power - Max | 125W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPB70N10S3 12 IPB70N10S312 |