ILD615

Features: • Identical Channel to Channel Footprint• Dual and Quad Packages Feature:- Reduced Board Space- Lower Pin and Parts Count- Better Channel to Channel CTR Match- Improved Common Mode Rejection• Isolation Test Voltage from Double Molded Package, 5300 VRMS• Lead-free ...

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SeekIC No. : 004374231 Detail

ILD615: Features: • Identical Channel to Channel Footprint• Dual and Quad Packages Feature:- Reduced Board Space- Lower Pin and Parts Count- Better Channel to Channel CTR Match- Improved Common ...

floor Price/Ceiling Price

Part Number:
ILD615
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Identical Channel to Channel Footprint
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage from Double Molded Package, 5300 VRMS
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC



Application

• UL1577, File No. E52744 System Code H or J, Double Protection
• CSA 93751
• BSI IEC60950 IEC60965
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1



Pinout

  Connection Diagram


Specifications

Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Parameter Test condition Symbol Value Unit
Reverse voltage   VR 6.0 V
Forward current   IF 60 mA
Surge current   IFSM 1.5 A
Power dissipation   Pdiss 100 mW
Derate linearly from 25 °C     1.33 mW/°C



Description

The ILD615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS.

The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments.

Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA.




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