IGBT Transistors 600V 40A 306W
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Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 1.95 V |
Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 40 A |
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 306 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247 |
Packaging : | Tube |