IKW40N120T2

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Description

The features of IKW40N120T2 are: (1)Short circuit withstand time -10s; (2)Designed for: Frequency Converters and Uninterrupted Power Supply; (3)Trench and Fieldstop technology for 1200 V applications offers : very tight parameter distribution and high ruggedness, temperature stable behavior; (4)NPT technology offers easy parallel switching capability due to; (5)positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode.

The following is about the absolute maximum ratings of IKW40N120T2: (1)Collector-emitter voltage: 1200 V; (2)DC collector current: 75A at TC = 25°C and 40A at TC = 100°C; (3)Pulsed collector current, tp limited by Tjmax: 105A; (4)Turn off safe operating area VCE 1200V, Tj 150°C: 105A; (5)Diode forward current: 80A at TC = 25°C and 40A at TC = 100°C; (6)Diode pulsed current, tp limited by Tjmax: 105A; (7)Gate-emitter voltage: ±20 V; (8)Short circuit withstand time VGE = 15V, VCC 1200V, Tj 150°C: 10S.

The electrical characteristics of the IKW40N120T2 are: (1)Collector-emitter breakdown voltage: 1200V at VGE=0V, IC=1.5mA; (2)Collector-emitter saturation voltage: 1.8V typ and 2.3V max at VGE = 15V, IC=40A, Tj=25°C; (3)Diode forward voltage: 1.75V typ and 2.3V max at VGE=0V, IF=40A, Tj=25°C; (4)Gate-emitter threshold voltage: 5.0V min and 6.5V max at IC=1.5mA,VCE=VGE; (5)Gate-emitter leakage current: 600nA at VCE=0V,VGE=20V ; (6)Transconductance: 21s at VCE=20V, IC=40A; (7)Integrated gate resistor: 6 .