IHW30N60T

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.5 V
Power Dissipation : 187 W
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-247-3


Features:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175
• Short circuit withstand time – 5s
• TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current, limited by Tjmax TC = 25 TC = 100	IC	60 30	A
Pulsed collector current, tp limited by Tjmax	ICpuls	90
Turn off safe operating area VCE 600V, Tj 175	-	90
Diode forward current TC = 25 TC = 100	IF	23 13
Diode pulsed current, tp limited by Tjmax	IFpuls	30
Gate-emitter voltage	VGE	±20 ±25	V
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150	tSC	5	s
Power dissipation, TC = 25	Ptot	187	W
Operating junction temperature	Tj	-40...+175
Storage temperature	Tstg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.