Schottky (Diodes & Rectifiers) Schottky Diode Silicon Carbide
IDT16S60C: Schottky (Diodes & Rectifiers) Schottky Diode Silicon Carbide
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Features: • 0.5 MICRON CMOS Technology• Input frequency range: 10MHz f2Q Max. spec (F...
Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V |
Forward Continuous Current : | 16 A | Max Surge Current : | 118 A |
Configuration : | Single | Forward Voltage Drop : | 1.7 V |
Maximum Reverse Leakage Current : | 200 uA | Operating Temperature Range : | - 55 C to + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
Parameter | Symbol | Conditions | Value | Unit |
Continuous forward current RMS forward current |
IF IF,RMS |
TC <140 f=50 Hz |
16 23 |
A |
Surge non-repetitive forward current, sine halfwave |
IF,SM | TC=25,tp=10 ms |
118 | |
Repetitive peak forward current | IF,RM | Tj =150 , TC =100 ,D=0.1 |
64 | |
Non-repetitive peak forward current | IF,max | TC=25 ,tp=10s |
528 | |
i2t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Mounting torque |
i2dt VRRM dv/dt Ptot Tj,Tstg |
TC=25 ,tp =10 ms VR=0.480 TC =25 M3 and M3.5 screws |
69 600 50 136 -55 ... 175 60 |
A2s V V/ns W Ncm |
Technical/Catalog Information | IDT16S60C |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Diode Type | Silicon Carbide |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 16A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 16A |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 200A @ 600V |
Speed | No Recovery Time > 500mA (Io) |
Mounting Type | Through Hole, Radial |
Package / Case | TO-220-2 |
Packaging | Tube |
Capacitance @ Vr, F | 650pF @ 1V, 1MHz |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IDT16S60C IDT16S60C |