IDT12S60C

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Maximum Reverse Leakage Current : 160 uA
Forward Continuous Current : 12 A
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Max Surge Current : 98 A


Features:

• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾


Specifications

Parameter	Symbol	Conditions	Value	Unit
Continuous forward current RMS forward current	I F I F,RMS	T C<140 f =50 Hz	12 18	A
Surge non-repetitive forward current, sine halfwave	I F,SM	T C=25 , t p=10 ms	98
Repetitive peak forward current	I F,RM	T j=150 , T C=100 , D =0.1	49
Non-repetitive peak forward current i2t value	I F,max fi 2dt	T C=25 , t p=10 s T C=25 , t p=10 ms	410 48	A A2s
Repetitive peak reverse voltage	V RRM		600	V
Diode ruggedness dv/dt Power dissipation	dv /dt P tot	VR = 0.480V T C=25	50 115	V/ns W
Operating and storage temperature	T j, T stg	T C=25	-55 ... 175
Mountig torque		M3 and M3.5 screws	60	Ncm

Parameters:

Technical/Catalog Information	IDT12S60C
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	12A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 12A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	160A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2
Packaging	Tube
Capacitance @ Vr, F	530pF @ 1V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IDT12S60C IDT12S60C