IC62VV5128L

• Access times of 55, 70, 100 ns
• CMOS Low power operation:
I_CC1=10mA (typical)* operation
I_SB2=1A (typical)* standby
* Typical values are measured at V_CC=1. 8V, T_A=25°C
• Low data retention voltage: 1.0V (min.)
• Output Enable (OE) and Chip Enable (CE) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
- No clock or refresh reguired
• Single 1.65V-2.2V power supply
• Available in the 32-pin 8*20mm TSOP- 1, 32-pin 8*13.4mm TSOP-1 and 48- pin 6*8mm TF-BGA

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The IC62VV5128L is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSI's low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers.

When CE is HIGH (deselected), the IC62VV5128L assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable ( WE) controls both writing and reading of the memory.

The IC62VV5128L are available in 32-pin 8*20mm TSOP-1, 8*13.4mm TSOP-1 and 48-pin 6*8mm TFBGA.