Features: • High-speed access time: 8, 10, 12, and 15 ns• CMOS low power operation• TTL and CMOS compatible interface levels• Single 3.3V ± 10%power supply• Fully static operation: no clock or refresh required• Three state outputs• Data control for upper a...
IC61LV12816: Features: • High-speed access time: 8, 10, 12, and 15 ns• CMOS low power operation• TTL and CMOS compatible interface levels• Single 3.3V ± 10%power supply• Fully stati...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
ApplicationUsing this IC socket, developers can connect a 64-pin 0.8 mm-pitch LCC (64D0) package M...
Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typic...
Symbol |
Parameter |
Value |
Unit |
VCC |
Power Supply Voltage Relative to GND |
0.5 to 4.0 |
V |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to Vcc+0.5 |
V |
TSTG |
Storage Temperature |
65 to +150 |
°C |
TBIAS |
Temperature Under Bias: Com. |
65 to +85 |
°C |
Ind. |
45 to +90 |
||
PT |
Power Dissipation |
2.0 |
W |
IOUT |
DC Output Current (LOW) |
+20 |
mA |
The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion of the IC61LV12816 is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IC61LV12816 is packaged in the JEDEC standard 44-pin 400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.