Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typical)• Low standby power: 500 W (typical) CMOS standby• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications• Fully static operation: no clock or refres...
IC61C1024: Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typical)• Low standby power: 500 W (typical) CMOS standby• Output Enable (OE) and two Chip En...
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ApplicationUsing this IC socket, developers can connect a 64-pin 0.8 mm-pitch LCC (64D0) package M...
Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typic...
Features: • High-speed access times: 10, 12, 15, 20, 25 ns• Low active power: 400 mW (...
Symbol |
Parameter |
Value |
Unit |
VTERM | Terminal Voltage with Respect to GND |
0.5 to +7.0 |
V |
TBIAS | Temperature Under Bias |
55 to +125 |
|
TSTG | Storage Temperature |
65 to +150 |
|
PT | Power Dissipation |
1.5 |
W |
IOUT | DC Output Current (LOW) |
20 |
mA |
The ICSI IC61C1024 and IC61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 of the IC61C1024 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IC61C1024 and IC61C1024L are available in 32-pin 300mil SOJ, and 8*20mm TSOP-1, and 8*13.4mm TSOP-1 packages.