Features: • High-speed access times: 10, 12, 15, 20, 25 ns• Low active power: 400 mW (typical)• Low standby power -- 250 µW (typical) CMOS standby -- 55 mW (typical) TTL standby• Fully static operation: no clock or refresh required• TTL compatible interface and ...
IC61C256AH: Features: • High-speed access times: 10, 12, 15, 20, 25 ns• Low active power: 400 mW (typical)• Low standby power -- 250 µW (typical) CMOS standby -- 55 mW (typical) TTL stan...
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ApplicationUsing this IC socket, developers can connect a 64-pin 0.8 mm-pitch LCC (64D0) package M...
Features: • High-speed access time: 12, 15, 20, 25 ns• Low active power: 600 mW (typic...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to +7.0 | V |
TBIAS | Temperature Under Bias | 55 to +125 | |
TSTG | Storage Temperature | 65 to +150 | |
PT | Power Dissipation | 1.5 | W |
IOUT |
DC Output Current (LOW) | 20 | mA |
The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE ). The active LOW Write Enable (WE ) controls both writing and reading of the memory.The IC61C256AH is pin compatible with other 32k x 8SRAMs and are available in 28-pin 300mil PDIP, 300mil SOJ, and 8*13.4mm TSOP-1 package, 330 mil SOP.