HYS72T64400HFN3.7B

Features: • 240-pin Fully-Buffered ECC Dual-In-Line DDR2 SDRAM Module for PC, Workstation and Server main memory applications.• Module organisation one rank 64M × 72, one rank 128M × 72, two ranks 128M × 72, two ranks 256M × 72• JEDEC Standard Double Data Rate 2 Synchronous DRAMs...

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SeekIC No. : 004369674 Detail

HYS72T64400HFN3.7B: Features: • 240-pin Fully-Buffered ECC Dual-In-Line DDR2 SDRAM Module for PC, Workstation and Server main memory applications.• Module organisation one rank 64M × 72, one rank 128M × 72,...

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Part Number:
HYS72T64400HFN3.7B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• 240-pin Fully-Buffered ECC Dual-In-Line DDR2 SDRAM Module for PC, Workstation and Server main memory applications.
• Module organisation one rank 64M × 72, one rank 128M × 72, two ranks 128M × 72, two ranks 256M × 72
• JEDEC Standard Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8 V (± 0.1 V) power supply.
• Built with 512Mb DDR2 SDRAMs in 60-ball FBGA Chipsize Packages.
• Re-drive and re-sync of all address, command, clock and data signals using AMB (Advanced Memory Buffer).
• High-Speed Differential Point-to-Point Link Interface at 1.5 V (Jedec standard pending).
• Host Interface and AMB component industry standard compliant.
• Supports SMBus protocol interface for access to the AMB configuration registers.
• Detects errors on the channel and reports them to the host memory controller.
• Automatic DDR2 DRAM Bus Calibration.
• Automatic Channel Calibration.
• Full Host Control of the DDR2 DRAMs.
• Over-Temperature Detection and Alert.
• Hot Add-on and Hot Remove Capability.
• MBIST and IBIST Test Functions.
• Transparent Mode for DRAM Test Support.
• Low profile: 133.35mm × 30.35 mm
• 240 Pin gold plated card connector with 1.00mm contact centers (JEDEC standard pending).
• Based on JEDEC standard reference card designs (Jedec standard pending).
• SPD (Serial Presence Detect) with 256 Byte serial E2PROM.Performance:
• RoHS Compliant Products1)





Specifications

Symbol Parameter Rating Unit Note
Min. Max.
VDD ltage on VDD pin relative to VSS 0.5 +2.3 V 1)
VCC Voltage on VCC pin relative to VSS 0,3 1.75 V  
VDDQ Voltage on VDDQ pin relative to VSS 0.5 +2.3 V 1)2)
VDDL Voltage on VDDL pin relative to VSS 0.5 +2.3 V 1)2)
VIN, VOUT Voltage on any pin relative to VSS 0.3 1.75 V 1)
TSTG Storage Temperature 55 100 1)2)
VTT Voltage on VTT pin relative to VSS 0.5 2.3 V  
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.





Description

This document describes the electrical and mechanical features of Qimonda's 240-pin, PC2-4200F, PC2-5300F ECC ype, Fully Buffered Double-Data-Rate Two Synchronous DRAM Dual In-Line Memory Modules (DDR2 SDRAM FBDIMMs).

Fully Buffered DIMMs of the HYS72T64400HFN3.7B use commodity DRAMs isolated from the memory channel behind a buffer on the DIMM. They are intended for use as main memory when installed in systems such as servers and workstations. PC2- 4200, PC2-5300 refers to the DIMM naming convention indicating the DDR2 SDRAMs running at 266, 333 MHz clock speed and offering 4200, 5300 MB/s peak bandwidth. FBDIMM features of the HYS72T64400HFN3.7B a novel architecture including the Advanced Memory Buffer. This single chip component, located in the center of each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the host controller and the DDR2 SDRAMs including data in- and output. The AMB communicates with the host controller and / or the adjacent DIMMs on a system board using an Industry Standard High-Speed Differential Point-to-Point Link Interface at 1.5 V.

The Advanced Memory Buffer of the HYS72T64400HFN3.7B also allows buffering of memory traffic to support large memory capacities. All memory control for the DRAM resides in the host, including memory request initiation, timing, refresh, scrubbing, sparing, configuration access, and power management. The Advanced Memory Buffer interface is responsible for handling channel and memory requests to and from the local DIMM and for forwarding requests to other DIMMs on the memory channel. Fully Buffered DIMM provides a high memory bandwidth, large capacity channel solution that has a narrow host interface. The maximum memory capacity of the HYS72T64400HFN3.7B is 288 DDR2 SDRAM devices per channel or 8 DIMMs.






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