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HYS64V8200GDL

Features: • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications• one bank 8M x 64 and two bank 16M x 64 non-parity module organisation• Single +3.3V(± 0.3V ) power supply• Programmable CAS Latency, Burst Length a...

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SeekIC No. : 004369484 Detail

HYS64V8200GDL: Features: • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications• one bank 8M x 64 and two bank 16M x 64 non-parity module or...

HYS64V8200GDL Data Sheet

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Part Number:
HYS64V8200GDL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
   for PC 100 and PC133 notebook applications
• one bank 8M x 64 and two bank 16M x 64 non-parity module organisation
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
   (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Uses 8M x 16 128Mbit SDRAM components
• 4096 refresh cycles every 64 ms
• Gold contact pad, JEDEC MO-190 outline dimensions
• This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical specification
• All PC133 modules are fully backward compatible for PC100 applications.


Specifications

Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT
1.0
4.6
V
Power supply voltage on VDD
VDD
1.0
4.6
V
Storage temperature range
TSTG
-55
+150
Power dissipation (per SDRAM component)
PD
-
1
W
Data out current (short circuit)
IOS
-
50
mA
Permanent device damage may occur if "Absolute Maximum Ratings" are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability


Description

These INFINEON HYS64V8200GDL modules are industry standard 144 pin 8-byte Synchronous DRAM (SDRAM) Small Outline Dual In-line Memory Modules (SO-DIMM) which are organised as 8Mx64 (64MByte) and 16x64 (128MByte) high speed memory arrays designed for use in non-parity applications. These SO-DIMMs use SDRAMs in TSOPII packages. Decoupling capacitors are mounted on the board.

The DIMMs of the HYS64V8200GDL use serial presence detects implemented via a serial E2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM anufacturer and the second 128 bytes are available to the end user.

All INFINEON 144-pin SO-DIMMs of the HYS64V8200GDL provide a high performance, flexible 8-byte interface in a 67,6 mm long footprint.




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