Features: • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications• One bank 64M x 64, 64M x 72 and two bank 128M x 64, 128M × 72 organization• JEDEC standard Double Data Rate Synchronous DRAMs (DDR-I SDRAM) Single...
HYS64D128020GU-7-A: Features: • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications• One bank 64M x 64, 64M x 72 and two bank 128M x 64, ...
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Features: • Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules• Two ranks 12...
Parameter |
Symbol |
Limit Values |
Unit | |
min. |
max. | |||
Input / Output voltage relative to VSS |
VIN, VOUT |
0.5 |
3.6 |
V |
Power supply voltage on VDD/VDDQ to VSS |
VDD, VDDQ |
0.5 |
3.6 |
V |
Storage temperature range |
TSTG |
-55 |
+150 |
|
Power dissipation (per SDRAM component) |
PD |
- |
1 |
W |
Data out current (short circuit) |
IOS |
- |
50 |
mA |
The HYS64D128020GU-7-A are industry standard 184-pin 8-byte Dual in-line Memory Modules (DIMMs) organized as 64M × 64 and 128M × 64 for non-parity and 64M x 72 and 128M x 72 for ECC main memory applications. The memory array is designed with 512Mbit Double Data Rate Synchronous DRAMs. A variety of decoupling capacitors are mounted on the PC board. The DIMMs feature of the HYS64D128020GU-7-A serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer.