Specifications Parameter Symbol Values Unit Min. Max. Input / Output voltage relative to VSS VIN, VOUT 1.0 4.6 V Power supply voltage on VDD VDD -1.0 4.6 V Storage temperature range TSTG -55 +150 Power dissipation PD ...
HYS64V16302GU: Specifications Parameter Symbol Values Unit Min. Max. Input / Output voltage relative to VSS VIN, VOUT 1.0 4.6 V Power supply voltage on VDD VDD -1.0...
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Features: • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules fo...
Parameter |
Symbol |
Values |
Unit | |
Min. |
Max. | |||
Input / Output voltage relative to VSS |
VIN, VOUT |
1.0 |
4.6 |
V |
Power supply voltage on VDD |
VDD |
-1.0 |
4.6 |
V |
Storage temperature range |
TSTG |
-55 |
+150 |
|
Power dissipation |
PD |
4 |
W | |
Data out current (short circuit) |
IOS |
50 |
mA |
The HYS64V16302GU is an industry standard 168-pin 8-byte Dual in-line Memory Module (DIMM) which is organized as 16M * 64 in an one bank high speed memory arrays designed with 256 Mbit Synchronous DRAMs for non-parity applications. The DIMMs use -7 speed sorted 16M * 16 organised 256Mbit SDRAM devices in TSOP54 packages to meet the PC133-222 requirements, - 7.5 for PC133-333 and -8 parts for the standard PC100 applications. Decoupling capacitors are mounted on the PC board. The PC board design of the HYS64V16302GU is according to INTEL's module specification. The DIMMs have a serial presence detect, implemented with a serial E2PROM using the 2-pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.
All Infineon 168-pin DIMMs of the HYS64V16302GU provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint.
Important Notice of the HYS64V16302GU: This module, which is based on 256MBit device technology can only be used in applications, where the 256Mbit addressing is supported.