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HYS64V16200GDL

Features: • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications• One bank 16M x 64 (128MByte) and two banks 32M x 64 (256 MByte) non-parity module organisation• Single +3.3V(± 0.3V ) power supply• Programmable CAS...

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SeekIC No. : 004369466 Detail

HYS64V16200GDL: Features: • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications• One bank 16M x 64 (128MByte) and two banks 32M x 64 (256 MBy...

HYS64V16200GDL Data Sheet

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Part Number:
HYS64V16200GDL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
   for PC100 and PC133 notebook applications
• One bank 16M x 64 (128MByte) and two banks 32M x 64 (256 MByte)
   non-parity module organisation
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
   (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• 256Mbit SDRAM low power components in TSOP54 packages with 16M x 16 organisation
• 8192 refresh cycles every 64 ms
• Gold contact pad, JEDEC MO-190 outline dimensions
• This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical specifications
• All PC133 modules are fully backward compatible to PC100-222 operation
• Importante Notice:
   These SO-DIMM modules are based on 256Mbit SDRAM technology and can be
   used in applications only, where 256Mbit addressing is supported.


Specifications

Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT
1.0
4.6
V
Power supply voltage on VDD
VDD
1.0
4.6
V
Storage temperature range
TSTG
-55
+150
Power dissipation (per SDRAM component)
PD
-
50
W
Data out current (short circuit)
IOS
-
1
mA
Permanent device damage may occur if "Absolute Maximum Ratings" are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability


Description

This INFINEON HYS64V16200GDL modules are industry standard 144 pin 8-byte Synchronous DRAM (SDRAM) Small Outline Dual In-line Memory Modules (SO-DIMM) which are organised as x64 high speed memory arrays designed for use in non-parity applications. These SO-DIMMs use 256Mbit SDRAMs in TSOPII packages. Decoupling capacitors are mounted on the board.

The DIMMs of the HYS64V16200GDL use serial presence detects implemented via a serial E2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.

All INFINEON 144-pin SO-DIMMs of the HYS64V16200GDL provide a high performance, flexible 8-byte interface in a 67,6 mm long footprint.




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