HYS64T256020HU3SA

1) When V_DD and V_DDQ and V_DDL are less than 500 mV; V_REF may be equal to or less than 300 mV
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
  Attention: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The HYS64T256020HU3SA module family are unbuffered DIMM modules "UDIMMs with 30,0 mm
height based on DDR2 technology. DIMMs are available as non-ECC modules in 256M * 64 (2 GB), and as ECC modules in 256M * 72 (2 GB) organization and density,intended for mounting into 240-pin connector sockets.

The memory array of the HYS64T256020HU3SA is designed with 1-Gbit Double-Data-Rate-Two (DDR2) Synchronous DRAMs. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E²PROM device using the
2-pin I²C protocol. The first 128 bytes of the HYS64T256020HU3SA are programmed with configuration data and are write protected; the second 128 bytes are available to the customer.