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HYS64T256020EU-3B

Features: • 240-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.• 256M * 64 and 256M *72 module organization,and 128M * 8 chip organization• Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply• 2 GB Built with...

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SeekIC No. : 004369434 Detail

HYS64T256020EU-3B: Features: • 240-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.• 256M * 64 and 256M *72 module organization,and 128M * 8 chip organization• Standard Double-Data-Rate-Tw...

HYS64T256020EU-3B Data Sheet

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Part Number:
HYS64T256020EU-3B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• 240-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.
• 256M * 64 and 256M *72 module organization,and 128M * 8 chip organization
• Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply
• 2 GB Built with 1Gbit DDR2 SDRAMs in and P-TFBGA-68-6 chipsize packages
• All speed grades faster than DDR400 comply with DDR400 timing specifications.
• Programmable CAS Latencies (3, 4, 5 and 6), Burst Length (8 & 4) and Burst Type 
• Average Refresh Period 7.8 s at a TCASE lower than 85°C, 3.9s between 85°C and 95°C.
• Auto Refresh (CBR) and Self Refresh
• Programmable self refresh rate via EMRS2 setting
• Programmable partial array refresh via EMRS2 settings
• DCC enabling via EMRS2 setting
• All inputs and outputs SSTL_1.8 compatible
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT)
• Serial Presence Detect with E2PROM
• UDIMM and EDIMM Dimensions (nominal): 30 mm high, 133.35 mm wide
• Based on standard reference layouts Raw Card "E" and "G"
• RoHS compliant products1)


Specifications

Symbol Parameter
Rating
 Unit Note
Min. Max.
VDD Voltage on VDD pin relative to VSS

-1.0

 +2.3 V 1)
VDDQ Voltage on VDDQ pin relative to VSS

-0.5

 +2.3 V 1)2)
VDDL Voltage on VDDL pin relative to VSS -0.5 +2.3 V 1)2)
VIN,VOUT Voltage on any pin relative to VSS -0.5 +2.3 V 1)
TSTG Storage Temperature -55 +100 1)2)

1)When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2)Storage Temperature is the case surface temperature on the center/top side of the DRAM.

Attention: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HYS64T256020EU-3B module family are unbuffered DIMM modules "UDIMMs" with 30 mm height based on DDR2 technology. DIMMs are available as non-ECC modules in 256M * 64 (2 GB) and as ECC modules in 256M * 72 (2 GB) organization and density, intended for mounting into 240-pin connector sockets.

The memory array of the HYS64T256020EU-3B is designed with 1-Gbit Double-Data-Rate- Two (DDR2) Synchronous DRAMs. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and are write protected; the second 128 bytes are available to the customer.




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