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HYS64T256020EDL

Features: 200-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.• 128M * 64, 256M * 64 module organization and 64M * 16 and 128M * 8 chip organization• Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply• 1 GB and 2 G...

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SeekIC No. : 004369420 Detail

HYS64T256020EDL: Features: 200-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.• 128M * 64, 256M * 64 module organization and 64M * 16 and 128M * 8 chip organization• Standard Double-Data-Rate...

HYS64T256020EDL Data Sheet

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Part Number:
HYS64T256020EDL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

200-Pin PC26400, PC25300 and PC24200 DDR2 SDRAM memory modules.
• 128M * 64, 256M * 64 module organization and 64M * 16 and 128M * 8 chip organization
• Standard Double-Data-Rate-Two Synchronous DRAMs (DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power supply
• 1 GB and 2 GB modules built with 1-Gbit DDR2 SDRAMs in PG-TFBGA-84 and PG-TFBGA-60 chipsize packages
• All speed grades faster than DDR2-400 comply with DDR2-400 timing specifications.
• Programmable CAS Latencies (3, 4,5 and 6 ), Burst Length (8 & 4) and Burst Type
• Auto Refresh (CBR) and Self Refresh
• Auto Refresh for temperatures above 85 tREFI = 3.9 s.
• Programmable self refresh rate via EMRS2 setting.
• Programmable partial array refresh via EMRS2 settings.
• DCC enabling via EMRS2 setting.
• All inputs and outputs SSTL_1.8 compatible
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT)
• Serial Presence Detect with E2PROM
• SO-DIMM Dimensions (nominal): 30 mm high,67.6 mm wide
• Based on standard reference layouts Raw Card "A" and "F"
• RoHS compliant products1)




Specifications

Symbol
Parameter
Min.
Max.
Unit
Note
VDD
 Voltage on VDD pin relative to VSS
-1.0
+2.3
V
1)
VDDQ
 Voltage on VDDQ pin relative to VSS
0.5
+2.3
V
1)2)
VDDL
 Voltage on VDDL pin relative to VSS
0.5
+2.3
V
1)2)
VIN,VOUT
 Voltage on any pin relative to VSS
0.5
+2.3
V
1)
TSTG
 Storage Temperature
-55
+100
1)2)

1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.






Description

The Qimonda HYS64T256020EDL module family are small outline DIMM modules "SO-DIMMs" with 30 mm height based on DDR2 technology. DIMMs are available as non-ECC modules in 128M * 64 (1GB) and 256M * 64 (2 GB) organization and density, intended for mounting into 200-pin connector sockets.

The memory array of the HYS64T256020EDL is designed with 1-Gbit Double-Data-Rate-Two (DDR2) Synchronous DRAMs. Decoupling capacitors are mounted on the PCB board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes of the HYS64T256020EDL are programmed with configuration data and are write protected; the second 128 bytes are available to the customer.






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