Features: • Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules• One rank 16M * 64 and two bank 32M * 64 organization• JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM)• Single +2.5V (± 0.2 V) power supply• Built with 256 Mbit DDR SDRAMs organised...
HYS64D32020GDL-6-B: Features: • Non-parity 200-Pin Small Outline Dual-In-Line Memory Modules• One rank 16M * 64 and two bank 32M * 64 organization• JEDEC standard Double Data Rate Synchronous DRAMs (D...
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Features: • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules fo...
Parameter |
Symbol |
Values |
Unit |
Note/Test Condition | ||
Min. |
typ. |
Max. | ||||
Voltage on I/O pins relative to VSS |
VIN, VOUT |
0.5 |
- |
VDDQ+0.5 |
V |
- |
Voltage on inputs relative to VSS |
VIN |
-1 |
- |
+3.6 |
V |
- |
Voltage on VDD supply relative to VSS |
VDD |
-1 |
- |
+3.6 |
V |
- |
Voltage on VDDQ supply relative to VSS |
VDDQ |
-1 |
- |
+3.6 |
V |
- |
Operating temperature (ambient) |
TA |
0 |
- |
+70 |
°C |
- |
Storage temperature (plastic) |
TSTG |
-55 |
- |
+150 |
°C |
- |
Power dissipation (per SDRAM component) |
PD |
- |
1 |
- |
W |
- |
Short circuit output current |
IOUT |
- |
50 |
- |
mA |
- |
The HYS64D32020GDL-6-B are industry standard 200-Pin Small Outline Dual-In-Line Memory Modules (SO-DIMMs) organized as 32M × 64 and 16M × 64. The memory array is designed with Double Data Rate Synchronous DRAMs (DDR SDRAM). A variety of decoupling capacitors of the HYS64D32020GDL-6-B are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer.