HYS64D32000HDL

Features: • Non-parity 200-Pin Small-Outline Dual-In-Line Memory Modules• One rank 32M *64 and two ranks 64M *64 organization• Standard Double Data Rate Synchronous DRAMs ( )• Single +2.5 V (± 0.2 V) power supply and +2.6 V (± 0.1 V) for DDR400• Built with 512 Mbit s ...

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SeekIC No. : 004369373 Detail

HYS64D32000HDL: Features: • Non-parity 200-Pin Small-Outline Dual-In-Line Memory Modules• One rank 32M *64 and two ranks 64M *64 organization• Standard Double Data Rate Synchronous DRAMs ( )•...

floor Price/Ceiling Price

Part Number:
HYS64D32000HDL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Non-parity 200-Pin Small-Outline Dual-In-Line Memory Modules
• One rank 32M *64 and two ranks 64M *64 organization
• Standard Double Data Rate Synchronous DRAMs ( )
• Single +2.5 V (± 0.2 V) power supply and +2.6 V (± 0.1 V) for DDR400
• Built with 512 Mbit s organized as *16 in PTSOPII66 packages
• Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• All inputs and outputs SSTL_2 compatible
• Serial Presence Detect with E2PROM
• Standard form factor: 67.60 mm * 31.75 mm * 3.80 mm
• Standard reference layout Raw Cards A and C
• Gold plated contacts
• RoHS Compliant Products1)



Specifications

Parameter Symbol Values Unit Note/ Test
Condition
min. typ. max.
Voltage on I/O pins relative to VSS VIN, VOUT 0.5 VDDQ + 0.5 V
Voltage on inputs relative to VSS VIN 1 +3.6 V
Voltage on VDD supply relative to VSS VDD 1 +3.6 V
Voltage on VDDQ supply relative to VSS VDDQ 1 +3.6 V
Operating temperature (ambient) TA 0 +70
Storage temperature (plastic) TSTG -55 +150
Power dissipation (per SDRAM component) PD 1 W
Short circuit output current IOUT 50 mA

Attention: Permanent damage to the device may occur if "Absolute Maximum Ratings" are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit.




Description

The HYS64D32000HDL are industry standard 200-Pin Small-Outline Dual-In-Line Memory Modules (SO-DIMMs) organized as 64M ×64. The memory array is designed with Double Data Rate Synchronous DRAMs ( ). A variety of de coupling capacitors are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device of the HYS64D32000HDL using the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer.




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