HYMP512R724

Features: • 1GB (128M x 72) Registered DDR2 DIMM based on 128Mx4 DDR2 SDRAMs• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply• JEDEC Standard 240-pin dual in-line memory module (DIMM)• Error Check Correction (ECC) Capability&...

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SeekIC No. : 004369334 Detail

HYMP512R724: Features: • 1GB (128M x 72) Registered DDR2 DIMM based on 128Mx4 DDR2 SDRAMs• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply• JEDE...

floor Price/Ceiling Price

Part Number:
HYMP512R724
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

• 1GB (128M x 72) Registered DDR2 DIMM based on 128Mx4 DDR2 SDRAMs
• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
• JEDEC Standard 240-pin dual in-line memory module (DIMM)
• Error Check Correction (ECC) Capability
• All inputs and outputs are compatible with SSTL_1.8 interface
• OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination)
• Fully differential clock operations (CK & /CK)
• Programmable CAS Latency 3 / 4 /5 supported
• Programmable Burst Length 4 / 8 with both sequential and interleave mode
• All inputs and outputs SSTL_1.8 compatible
• Auto refresh and self refresh supported
• 7.8us refresh period at Lower than TCASE 85, 3.9us( 85 < TCASE 95)
• Serial Presence Detect(SPD) with EEPROM
• DDR2 SDRAM Package: 60ball FBGA



Specifications

Parameter
Symbol
Value
Unit
Note
Operating temperature(ambient)
TOPR
0 ~ +55
1
DRAM Component Case Temperature Range
TCASE
0 ~+95
2
Operating Humidity(relative)
HOPR
10 to 90
%
1
Storage Temperature
TSTG
-50 ~ +100
1
Storage Humidity(without condensation)
HSTG
5 to 95
1
Barometric Pressure(operating & storage)
PBAR
105 to 69
K Pascal
1,3
Note :
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating conditions for extended periods may affect reliablility.
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to tREFI=3.9㎲. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.
3. Up to 9850 ft.



Description

Hynix HYMP512R724 series is registered 240-pin double data rate 2 Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMP512R72(L)4 series consists of eighteen 128Mx4 DDR2 SDRAMs in 60-Lead FBGA chipsize packages. Hynix HYMP512R72(L)4 series provide a high performance 8-byte interface in 133.35mm width form factor of industry stanard. The HYMP512R724 is suitable for easy interchange and addition. Hynix HYMP512R72(L)4 series is designed for high speed of up to 333MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 4-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_1.8. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMP512R724 series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.




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