HYB 514400BJ-60

Features:

* 1 048 576 words by 4-bit organization
* 0 to 70 C operating temperature
* Fast Page Mode Operation
* Single + 5 V ( 10 %) supply with a built-in VBB generator
* Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
* Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
* Output unlatched at cycle end allows two-dimensional chip selection
* Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,hidden refresh and  test mode capability
* All inputs and outputs TTL-compatible
* 1024 refresh cycles / 16 ms
* Plastic Packages: P-SOJ-26/20-2 with 300 mil width


Pinout




Specifications

Operating temperature range ..................................................... 0 to 70
Storage temperature range.............................................  55 to + 150
Input/output voltage............................................................... 1 to + 7 V
Power Supply voltage.............................................................. 1 to + 7 V
Data out current (short circuit).......................................................... 50 mA


Description

The HYB 514400BJ-60 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514400BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514400BJ/BJL to be packed in a standard plastic P-SOJ-26/20 package. This package size HYB 514400BJ-60 provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 5 V ( 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL.