HYB 3116405BJ/BT(L)-60

Pinout

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Specifications

Operating temperature range ........................................................................................... 0 to 70
Storage temperature range........................................................................................ 55 to 150
Input/output voltage (5 V versions)................................................... 0.5 to min (V_CC + 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................ 0.5 to min (V_CC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................ 1.0 W
Power dissipation (3.3 V versions) ......................................................................................... 0.5 W
Data out current (short circuit)............................................................................................... 50 mA


Description

<FONT face=Verdana>The HYB 3116405BJ/BT(L)-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)405 to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB 3116405BJ/BT(L)-60 have a very low power "sleep mode" supported by Self Refresh.</FONT>