HYB 5117805BSJ-60

Operating temperature range ........................................................................................ 0 to 70 °C
Storage temperature range.................................................................................... 55 to 150 °C
Input/output voltage (5 V versions) ................................................ 0.5 to min (V_CC + 0.5, 7.0) V
Input/output voltage (3.3 V versions) ............................................. 0.5 to min (V_CC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................. 1.0 W
Power dissipation (3.3 V versions) .......................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The HYB 5117805BSJ-60 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117805BJ to be packaged in a standard SOJ-28 plastic packages. Package with 400 mil width are available. These packages HYB 5117805BSJ-60 provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.