HYB 5116405BJ-50

Features: • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,test mode and Self Refresh (on L-versions only)• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible• Plastic Package: P-SOJ-26/24-1 300 ...

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HYB 5116405BJ-50 Picture
SeekIC No. : 004368484 Detail

HYB 5116405BJ-50: Features: • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,test mode and Self Refresh (on L-versions only)• All inputs, outputs and clocks fully...

floor Price/Ceiling Price

Part Number:
HYB 5116405BJ-50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,test mode and Self Refresh (on L-versions only)
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil
   P-TSOPII-26/24-1 300 mil



Pinout

  Connection Diagram


Specifications

Operating temperature range ........................................................................................... 0 to 70
Storage temperature range........................................................................................ 55 to 150
Input/output voltage (5 V versions)................................................... 0.5 to min (VCC + 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................ 0.5 to min (VCC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................ 1.0 W
Power dissipation (3.3 V versions) ......................................................................................... 0.5 W
Data out current (short circuit)............................................................................................... 50 mA



Description

The HYB 5116405BJ-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116405BJ-50 to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB 3116(7)405BTL have a very low power "sleep mode" supported by Self Refresh.


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