HYB 3165800J-50

Operating temperature range.........................................................................................0 to 70 °C
Storage temperature range.................................................................................... 55 to 150 °C
Input/output voltage..............................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.................................................................................................-0.5V to 4.6 V
Power dissipation....................................................................................................................1.0 W
Data out current (short circuit)...............................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.

This device HYB 3165800J-50 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM's most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM HYB 3165800J-50 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800J/T to be packaged in a 500 mil wide SOJ-34 or TSOP-34 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.