HYB 3164405BJ-40

Pinout




Specifications

Operating temperature range............................ 0 to 70 °C
Storage temperature range....................... 55 to 150 °C
Input/output voltage................. -0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.................................... -0.5V to 4.6 V
Power dissipation................................................ .....0.62 W
Data out current (short circuit)................................. ..50 mA


Description

This HYB 3164405BJ-40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS' most advanced 0,25 m m-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B operates with a single 3.3 +/-0.3V power supply  and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB 3164405BJ-40 parts have a very low power ,sleep mode" supported by Self Refresh.