HYB 3164165ATL-60

This device HYB 3164165ATL-60 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164165ATL-60 to be packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5/6)165ATL parts have a very low power „sleep mode" supported by Self Refresh.